Samsung is aiming to begin mass production of its next-generation "1d" DRAM in late 2027, according to a report from Wccftech surfaced via Google News.
DRAM is the fast, short-term memory that sits alongside processors in everything from phones to data-center servers. The "1d" label refers to a new, more advanced manufacturing node — a tighter generation of the technology that lets chipmakers pack memory more densely and efficiently.
According to Wccftech, the push is closely tied to the artificial-intelligence boom. Samsung is reportedly racing to use this advanced DRAM to power HBM5, the next generation of high-bandwidth memory. HBM is the specialized, stacked memory that feeds data-hungry AI accelerators, and it has become one of the most fiercely contested products in the chip industry as demand for AI computing surges.
The report frames Samsung's late-2027 timeline as part of a competitive race, underscoring how memory makers are tying their most cutting-edge process technology directly to the AI hardware roadmap rather than treating it as a separate track.
It's worth noting the available source is a single aggregated headline, so finer details — yields, capacity, customers, or how Samsung's schedule stacks up against rivals — aren't specified here. Timelines this far out in semiconductor manufacturing are also targets, not guarantees, and can shift as process technology matures.
Why it matters: the memory that powers AI is now a strategic battleground, and Samsung's 2027 target signals how aggressively chipmakers are pinning their most advanced manufacturing to the future of AI hardware.